1N6630/TR

Microchip Technology

1N6630/TR

Analog & Power

DIODE GEN PURP 990V 1.4A

ActiveA, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F40pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)50 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)990 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.4 A
Current - Average Rectified (Io)1.4A
Current - Reverse Leakage @ Vr2 µA @ 990 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseA, Axial
Supplier Device PackageA, Axial

Environmental

Operating Temperature - Junction-65°C ~ 150°C