1N6623US/TR

Microchip Technology

1N6623US/TR

Analog & Power

DIODE GEN PURP 880V 1A A-MELF

ActiveSQ-MELF, AAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F10pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)50 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)880 V
Voltage - Forward (Vf) (Max) @ If1.55 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr500 nA @ 880 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseSQ-MELF, A
Supplier Device PackageA-MELF

Environmental

Operating Temperature - Junction-65°C ~ 150°C