1N6622US/TR

Microchip Technology

1N6622US/TR

Analog & Power

DIODE GEN PURP 660V 1.2A A-MELF

ActiveSQ-MELF, AAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F10pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)660 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.2 A
Current - Average Rectified (Io)1.2A
Current - Reverse Leakage @ Vr500 nA @ 660 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseSQ-MELF, A
Supplier Device PackageA-MELF

Environmental

Operating Temperature - Junction-65°C ~ 150°C