1N6073/TR

Microchip Technology

1N6073/TR

Analog & Power

DIODE GEN PURP 50V 850MA

ActiveA, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If2.04 V @ 9.4 A
Current - Average Rectified (Io)850mA
Current - Reverse Leakage @ Vr1 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseA, Axial
Supplier Device PackageA, Axial

Environmental

Operating Temperature - Junction-65°C ~ 155°C