1N5811

Microchip Technology

1N5811

Analog & Power

DIODE GEN PURP 150V 3A B AXIAL

ActiveB, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F60pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5 µA @ 150 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseB, Axial
Supplier Device PackageB, Axial

Environmental

Operating Temperature - Junction-65°C ~ 175°C