1N5622/TR

Microchip Technology

1N5622/TR

Analog & Power

DIODE GEN PURP 1KV 1A

ActiveA, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)2 µs
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr500 nA @ 1 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseA, Axial
Supplier Device PackageA, Axial

Environmental

Operating Temperature - Junction-65°C ~ 200°C