1N5550USE3

Microchip Technology

1N5550USE3

Analog & Power

DIODE GEN PURP 200V 3A B SQ-MELF

ActiveSQ-MELF, BAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)2 µs
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 200 V
SpeedStandard Recovery >500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF

Environmental

Operating Temperature - Junction-65°C ~ 175°C