1N5418E3

Microchip Technology

1N5418E3

Analog & Power

DIODE GEN PURP 400V 3A B AXIAL

ActiveB, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)150 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 400 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseB, Axial
Supplier Device PackageB, Axial

Environmental

Operating Temperature - Junction-65°C ~ 175°C