SICW1000N170A-BP

Micro Commercial Co

SICW1000N170A-BP

Analog & Power

N-CHANNEL MOSFET,TO-247AB

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.32Ohm @ 1.5A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds124 pF @ 1000 V
ManufacturerMicro Commercial Co
Mounting TypeThrough Hole
Product StatusActive
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max)+25V, -5V
Vgs(th) (Max) @ Id4.5V @ 1mA

Electrical

Drain-to-Source Voltage1700 V
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Current - Continuous Drain (Id) @ 25°C3A
Max Power Dissipation69W

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)