MSJP20N65A-BP

Micro Commercial Co

MSJP20N65A-BP

Analog & Power

N-CHANNEL MOSFET,TO-220AB(H)

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 25 V
ManufacturerMicro Commercial Co
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation151W

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB (H)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)