MCP55H12-BP

Micro Commercial Co

MCP55H12-BP

Analog & Power

MOSFET N-CH

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4900 pF @ 25 V
ManufacturerMicro Commercial Co
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)