MCMN2014HE3-TP

Micro Commercial Co

MCMN2014HE3-TP

Analog & Power

N-CHANNEL MOSFET, DFN2020-6LE

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 5A, 8V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1791 pF @ 10 V
ManufacturerMicro Commercial Co
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Current - Continuous Drain (Id) @ 25°C15A

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101