MCG65N03-TP

Micro Commercial Co

MCG65N03-TP

Analog & Power

N-CHANNEL MOSFET, DFN3333

Active8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4498 pF @ 15 V
ManufacturerMicro Commercial Co
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C65A
Max Power Dissipation75W (Tj)

Mechanical

PackageTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Supplier Device PackageDFN3333

Environmental

Operating Temperature-55°C~150°C(TJ)