MCG55P02A-TP

Micro Commercial Co

MCG55P02A-TP

Analog & Power

P-CHANNEL MOSFET, DFN3333

Active8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.3mOhm @ 15A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6358 pF @ 10 V
ManufacturerMicro Commercial Co
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C55A
Max Power Dissipation3.2W (Ta), 38W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Supplier Device PackageDFN3333

Environmental

Operating Temperature-55°C~150°C(TJ)