LSIC1MO170E1000

Littelfuse Inc

LSIC1MO170E1000

Analog & Power

SICFET N-CH 1700V 5A TO247-3L

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1Ohm @ 2A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 1000 V
ManufacturerLittelfuse Inc.
Mounting TypeThrough Hole
Product StatusObsolete
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+22V, -6V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage1700 V
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Max Power Dissipation54W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)