IXTP1R6N100D2

Littelfuse Inc

IXTP1R6N100D2

Datasheet

Analog & Power

MOSFET N-CH 1000V 1.6A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10Ohm @ 800mA, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds645 pF @ 25 V
ManufacturerLittelfuse Inc.
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Max Power Dissipation100W (Tc)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)