IXTA3N50D2

Littelfuse Inc

IXTA3N50D2

Datasheet

Analog & Power

MOSFET N-CH 500V 3A TO263

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 1.5A, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1070 pF @ 25 V
ManufacturerLittelfuse Inc.
Mounting TypeSurface Mount
PackagingTube
Part StatusActive
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage500 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Max Power Dissipation125W (Tc)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)