VWM200-01P

IXYS

VWM200-01P

Analog & Power

MOSFET 6N-CH 100V 210A V2-PAK

ObsoleteV2-PAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.2mOhm @ 100A, 10V
Base Product NumberVWM200
Configuration6 N-Channel (3-Phase Bridge)
Gate Charge (Qg) (Max) @ Vgs430nC @ 10V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 2mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C210A

Mechanical

PackageBox
Package / CaseV2-PAK
Supplier Device PackageV2-PAK

Environmental

Operating Temperature-40°C ~ 175°C (TJ)