Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 932A, 10V |
|---|---|
| Base Product Number | VMO1200 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2520 nC @ 10 V |
| Manufacturer | IXYS |
| Mounting Type | Chassis Mount |
| Product Status | Obsolete |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 64mA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1220A (Tc) |
| Package | Box |
|---|---|
| Package / Case | Y3-Li |
| Supplier Device Package | Y3-Li |
| Operating Temperature | -40°C ~ 150°C (TJ) |
|---|