General
| Base Product Number | SS275 |
|---|---|
| Diode Configuration | 3 Common Anode |
| Manufacturer | IXYS-RF |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | 6-SMD, Flat Lead Exposed Pad |
| Supplier Device Package | DE275 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|