Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 378 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V |
| Manufacturer | IXYS |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 168A (Tc) |
| Max Power Dissipation | 600W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | 24-PowerSMD, 21 Leads |
| Supplier Device Package | 24-SMPD |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|