Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 800mA, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
| Manufacturer | IXYS |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | Depletion |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-to-Source Voltage | 500 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Max Power Dissipation | 100W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|