IXTY10P15T

IXYS

IXTY10P15T

Datasheet

Analog & Power

MOSFET P-CH 150V 10A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs350mOhm @ 5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2210 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C~150°C(TJ)