IXTX6N200P3HV

IXYS

IXTX6N200P3HV

Analog & Power

MOSFET N-CH 2000V 6A TO247PLUSHV

ActiveTO-247-3 VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesPolar P3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage2000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation960W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247PLUS-HV

Environmental

Operating Temperature-55°C ~ 150°C (TJ)