IXTX210P10T

IXYS

IXTX210P10T

Analog & Power

MOSFET P-CH 100V 210A PLUS247-3

ActiveTO-247-3 VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.5mOhm @ 105A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds69500 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesTrenchP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C210A (Tc)
Max Power Dissipation1040W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)