IXTV96N25T

IXYS

IXTV96N25T

Analog & Power

MOSFET N-CH 250V 96A PLUS220

ObsoleteTO-220-3, Short TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs29mOhm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesTrench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Max Power Dissipation625W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3, Short Tab
Supplier Device PackagePLUS220

Environmental

Operating Temperature-55°C ~ 150°C (TJ)