IXTV200N10TS

IXYS

IXTV200N10TS

Datasheet

Analog & Power

MOSFET N-CH 100V 200A PLUS220SMD

ObsoletePLUS-220SMDAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9400 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation550W (Tc)

Mechanical

PackageTube
Package / CasePLUS-220SMD
Supplier Device PackagePLUS-220SMD

Environmental

Operating Temperature-55°C~175°C(TJ)