IXTV110N25TS

IXYS

IXTV110N25TS

Analog & Power

MOSFET N-CH 250V 110A PLUS220SMD

ObsoletePLUS-220SMDAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 55A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9400 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Max Power Dissipation694W (Tc)

Mechanical

PackageTube
Package / CasePLUS-220SMD
Supplier Device PackagePLUS-220SMD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)