Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.5Ohm @ 1A, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
| Manufacturer | IXYS |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | Depletion |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-to-Source Voltage | 1700 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tj) |
| Max Power Dissipation | 568W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|