IXTT1N450HV

IXYS

IXTT1N450HV

Analog & Power

MOSFET N-CH 4500V 1A TO268

ActiveTO-268-3, D³Pak (2 Leads + Tab), TO-268AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85Ohm @ 50mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1730 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id6.5V @ 250µA

Electrical

Drain-to-Source Voltage4500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Max Power Dissipation520W (Tc)

Mechanical

PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)