IXTQ200N06P

IXYS

IXTQ200N06P

Datasheet

Analog & Power

MOSFET N-CH 60V 200A TO3P

ObsoleteTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 400A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation714W (Tc)

Mechanical

PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Environmental

Operating Temperature-55°C ~ 175°C (TJ)