IXTP50N20PM

IXYS

IXTP50N20PM

Analog & Power

MOSFET N-CH 200V 20A TO220

ActiveTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2720 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation90W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220 Isolated Tab

Environmental

Operating Temperature-55°C~175°C(TJ)