IXTP1R6N50P

IXYS

IXTP1R6N50P

Datasheet

Analog & Power

MOSFET N-CH 500V 1.6A TO220AB

DiscontinuedTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.5Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusDiscontinued at
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 25µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Max Power Dissipation43W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C~150°C(TJ)