IXTP14N60PM

IXYS

IXTP14N60PM

Analog & Power

MOSFET N-CH 600V 7A TO220

ActiveTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs550mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220 Isolated Tab

Environmental

Operating Temperature-55°C ~ 150°C (TJ)