IXTN8N150L

IXYS

IXTN8N150L

Analog & Power

MOSFET N-CH 1500V 7.5A SOT-227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.6Ohm @ 4A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds8000 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesLinear
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id8V @ 250µA

Electrical

Drain-to-Source Voltage1500 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Max Power Dissipation545W (Tc)

Mechanical

PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-55°C ~ 150°C (TJ)