IXTN60N50L2

IXYS

IXTN60N50L2

Analog & Power

MOSFET N-CH 500V 53A SOT227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds24000 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesLinear L2™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Max Power Dissipation735W (Tc)

Mechanical

PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-55°C ~ 150°C (TJ)