IXTN30N100L

IXYS

IXTN30N100L

Analog & Power

MOSFET N-CH 1000V 30A SOT227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 15A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds13700 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesLinear
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation800W (Tc)

Mechanical

PackageBulk
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-55°C~150°C(TJ)