IXTN102N65X2

IXYS

IXTN102N65X2

Analog & Power

MOSFET N-CH 650V 76A SOT227

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 51A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10900 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesUltra X2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Max Power Dissipation595AW (Tc)

Mechanical

PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227

Environmental

Operating Temperature-55°C ~ 150°C (TJ)