IXTK8N150L

IXYS

IXTK8N150L

Analog & Power

MOSFET N-CH 1500V 8A TO264

ActiveTO-264-3, TO-264AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.6Ohm @ 4A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds8000 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesLinear
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id8V @ 250µA

Electrical

Drain-to-Source Voltage1500 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation700W (Tc)

Mechanical

PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXTK)

Environmental

Operating Temperature-55°C~150°C(TJ)