IXTK40P50P

IXYS

IXTK40P50P

Analog & Power

MOSFET P-CH 500V 40A TO264

ActiveTO-264-3, TO-264AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs230mOhm @ 20A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11500 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesPolarP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation890W (Tc)

Mechanical

PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXTK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)