IXTK32P60P

IXYS

IXTK32P60P

Datasheet

Analog & Power

MOSFET P-CH 600V 32A TO264

ActiveTO-264-3, TO-264AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs350mOhm @ 16A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11100 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesPolarP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Max Power Dissipation890W (Tc)

Mechanical

PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXTK)

Environmental

Operating Temperature-55°C~150°C(TJ)