IXTI10N60P

IXYS

IXTI10N60P

Analog & Power

MOSFET N-CH 600V 10A TO262

ObsoleteTO-262-3 Long Leads, I2PAK, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs740mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1610 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
PackagingTube
Part StatusObsolete
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 100µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation200W (Tc)

Mechanical

Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device PackageTO-262 (I2PAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)