IXTH2N150

IXYS

IXTH2N150

Analog & Power

DISCMOSFET N-CH STD-HIVOLTAGE TO

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.2Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds830 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage1500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation170W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)