IXTH200N10T

IXYS

IXTH200N10T

Analog & Power

MOSFET N-CH 100V 200A TO247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9400 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
SeriesTrench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation550W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)