IXTH16N10D2

IXYS

IXTH16N10D2

Analog & Power

MOSFET N-CH 100V 16A TO247

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs64mOhm @ 8A, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation830W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)