IXTH12N100L

IXYS

IXTH12N100L

Analog & Power

MOSFET N-CH 1000V 12A TO247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.3Ohm @ 500mA, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesLinear
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation400W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)