IXTH02N450HV

IXYS

IXTH02N450HV

Analog & Power

MOSFET N-CH 4500V 200MA TO247HV

ActiveTO-247-3 VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs625Ohm @ 10mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds246 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id6.5V @ 250µA

Electrical

Drain-to-Source Voltage4500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Max Power Dissipation113W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247HV

Environmental

Operating Temperature-55°C~150°C(TJ)