IXTC62N15P

IXYS

IXTC62N15P

Datasheet

Analog & Power

MOSFET N-CH 150V 36A ISOPLUS220

ObsoleteISOPLUS220™Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 31A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPolarHT™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseISOPLUS220™
Supplier Device PackageISOPLUS220™

Environmental

Operating Temperature-55°C~175°C(TJ)