IXTC26N50P

IXYS

IXTC26N50P

Datasheet

Analog & Power

MOSFET N-CH 500V 15A ISOPLUS220

ObsoleteISOPLUS220™Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs260mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Max Power Dissipation130W (Tc)

Mechanical

PackageTube
Package / CaseISOPLUS220™
Supplier Device PackageISOPLUS220™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)