IXTA8N65X2

IXYS

IXTA8N65X2

Datasheet

Analog & Power

MOSFET N-CH 650V 8A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesUltra X2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263

Environmental

Operating Temperature-55°C~150°C(TJ)